Permeable base transistor

Details Permeable base transistor Permeable base transistor

1982-09-13

1985-07-16

James, Andrew J.

357 68, H01L 2980, H01L 2348

Patent

active

045299978

ABSTRACT:
A vertical channel field effect transistor is disclosed which has a specialized grid structure in order to improve the characteristics. The improved field effect transistor utilizes an arrangement of two sets of parallel teeth which intersect to form a mesh-like structure in order to produce conduction filaments. The device is particularly applicable to field effect transistor structures which have two-grid transistors.

REFERENCES:
patent: 3354362 (1967-11-01), Zuleeg
patent: 3381189 (1968-04-01), Hinkle et al.
patent: 3571675 (1971-03-01), Faust
IEEE Transactions on Electron Devices, vol. ED-19, #3, 3/72, "Gridistor Development for the Microwave Power Region" by Teszner.

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