Permeable-base transistor

Details Permeable-base transistor Permeable-base transistor

1987-01-12

1988-06-21

Edlow, Martin H.

357 4, 357 59, 357 54, 357 2315, H01L 4902

Patent

active

047528125

ABSTRACT:
A semiconductor structure that includes a semiconductor substrate; an insulating layer adjacent the substrate; a semiconductor or conductor grid adjacent the insulating layer; another insulating layer adjacent the semiconductor grid; and an injector adjacent the second insulating layer. The injector includes a layer of silicon-rich insulator material and a layer of semiconductor material adjacent the silicon-enriched material.

REFERENCES:
patent: 4104675 (1978-08-01), DiMaria
patent: 4217601 (1980-08-01), DiMaria et al.
patent: 4472726 (1984-09-01), DiMaria et al.
patent: 4647958 (1987-03-01), Gardner

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