Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-12-29
1980-10-28
Munson, Gene M.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 23, 357 24, 357 45, 357 54, 357 89, 365183, H03K 500, H01L 2978, G11C 1134, H01L 2934
Patent
active
042309549
ABSTRACT:
Storage systems are provided with memory cells made of devices having different voltage thresholds for storing information permanently or semipermanently. The devices are arranged adjacent to each other and communicating with a diffusion region in a semiconductor substrate. Information is sensed by detecting the charge transferred from a selected cell to the diffusion region. In an embodiment of the invention, a P-type substrate has an N+ diffusion region formed therein with a plurality of adjacent and parallelly arranged word lines insulated from the substrate and disposed adjacent to the N+ diffusion region. A P+ region, preferably implanted into the substrate, is disposed under selected segments of the word lines to provide devices having a first or high threshold voltage magnitude. The remaining devices which are not associated with a P-30 region have a second or low threshold voltage magnitude. By applying a voltage of the same magnitude to each of the word lines, potential wells are formed which are filled by charge or carriers from the diffusion region. Since the potential wells associated with the high threshold devices hold less charge than do the low threshold devices, a charge or voltage sensing circuit connected to the N+ diffusion region is used to detect the amount of charge flowing between the wells and the diffusion region to thus identify the high and low threshold devices when the voltage on the selected word line is decreased. By eliminating the P+ regions and storing charge, e.g., electrons, at selected locations under the word lines in dual insulating layers, the cells may be electrically programmable.
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Unis "Charge-Coupled Device Dynamic Memory Cell" IBM Technical Disclosure Bulletin, vol. 21 (11/78) pp. 2262-2263.
Chan et al. "Charge-Coupled Memory Device" Applied Physics Lett., vol. 22 (15 Jun. 73) pp. 650-652.
International Business Machines - Corporation
Limanek Stephen J.
Munson Gene M.
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