Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1996-02-23
1999-02-02
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429816, 2042982, C23C 1434
Patent
active
058659706
ABSTRACT:
A dipole permanent magnet structure for use in a sputtering magnetron in which a central magnet structure having a magnetic field orientation parallel to a base plate, and upon which the central magnet is mounted, is placed adjacent to a first salient magnet having a magnetic field orientation orthogonal to the magnetic field orientation of the central magnet. A second salient magnet, located adjacent to the central magnet structure, has a magnetic field orientation orthogonal to the magnetic field orientation of the central magnet, but opposite polarity of the first salient magnet. The structure provides increased magnetic field strength and intensity along the working face of the sputtering magnetron to saturate and penetrate a target material inserted into the vacuum chamber of a sputtering system to facilitate the sputtering process.
REFERENCES:
patent: 2398653 (1946-04-01), Linlor
patent: 3365599 (1968-01-01), Brzezinski et al.
patent: 3737822 (1973-06-01), Buus et al.
patent: 3768054 (1973-10-01), Neugebauer
patent: 4448653 (1984-05-01), Wegmann
patent: 4461688 (1984-07-01), Morrison, Jr.
patent: 4482034 (1984-11-01), Baemann
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4707663 (1987-11-01), Minkoff et al.
patent: 4746417 (1988-05-01), Ferenbach et al.
patent: 4806894 (1989-02-01), Koto
patent: 4869811 (1989-09-01), Wolanski et al.
patent: 4872964 (1989-10-01), Suzuki et al.
patent: 4995958 (1991-02-01), Anderson et al.
patent: 5047130 (1991-09-01), Akao et al.
patent: 5107238 (1992-04-01), Leupold
patent: 5130005 (1992-07-01), Hurwitt et al.
patent: 5164063 (1992-11-01), Braeuer et al.
patent: 5171415 (1992-12-01), Miller et al.
patent: 5194131 (1993-03-01), Anderson
patent: 5262028 (1993-11-01), Manley
patent: 5382344 (1995-01-01), Hosokawa et al.
McDonald Rodney G.
Nguyen Nam
Permag Corporation
LandOfFree
Permanent magnet strucure for use in a sputtering magnetron does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Permanent magnet strucure for use in a sputtering magnetron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Permanent magnet strucure for use in a sputtering magnetron will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1113606