Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate
2006-09-05
2006-09-05
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
C117S003000, C117S004000, C117S008000, C117S940000
Reexamination Certificate
active
07101431
ABSTRACT:
A thermal treatment process for improving the resistance of a flux grown, periodically poled KTiOPO4crystal to photorefractive or photochromic damage comprising the steps of:i) heating said crystal from ambient temperature up to an annealing temperature in the range of from about 200° C. to about 400° C.;ii) maintaining said crystal at said annealing temperature in an oxygen containing atmosphere;iii) allowing said crystal to slowly cool down from said annealing temperature to ambient temperature.
REFERENCES:
patent: 5986798 (1999-11-01), Karlsson et al.
patent: 6597492 (2003-07-01), Rosenman et al.
patent: 6763042 (2004-07-01), Williams et al.
patent: 2002/0171912 (2002-11-01), Masuda
patent: 2003/0112835 (2003-06-01), Williams et al.
patent: 2006/0045455 (2006-03-01), Giesber, III
Kunemund Robert
Lumen Intellectual Property Services Inc.
Picarro, Inc.
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