Periodic monolayer semiconductor structures grown by molecular b

Details Periodic monolayer semiconductor structures grown by molecular b Periodic monolayer semiconductor structures grown by molecular b

1977-11-18

1980-05-27

Larkins, William D.

Metal treatment

Stock

Ferrous

148175, 357 4, 357 18, 331 945H, H01L 2926

Patent

active

042053293

ABSTRACT:
Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs).sub.n (AlAs).sub.m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al.sub.x Ga.sub.1-x As).sub.n (Ge.sub.2).sub.m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.

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