Periodic gain-type semiconductor laser device

Details Periodic gain-type semiconductor laser device Periodic gain-type semiconductor laser device

1991-12-04

1993-01-26

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 48, 372 96, H01S 319

Patent

active

051827581

ABSTRACT:
A periodic gain-type semiconductor laser device in which a mesa stripe has wide portions and narrow portions alternately arranged with a period that is an integral multiple of the half-wavelength of the emitted light. A multilayer structure including an n-AlGaAs first cladding layer 103 and an AlGaAs non-doped active layer 104 formed on the mesa stripe also have wide portions and narrow portions. An n-AlGaAs current confining layer 106 covers the sides of the AlGaAs non-doped active layer 104. The height of the top surface of the n-AlGaAs current confining layer 106 matches the height of the AlGaAs non-doped active layer 104. A p-AlGaAs second cladding layer 105 is formed on the AlGaAs non-doped active layer 104 and the current confining layer 106. A driving current is not injected into the narrow portions of the AlGaAs non-doped active layer 104.

REFERENCES:
patent: 4719633 (1988-01-01), Yoshikawa et al.
patent: 4737961 (1988-04-01), Mori et al.
Wei Hsin et al., International Electron Devices Meeting (Dec. 1987) pp. 792-795.

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