Static information storage and retrieval – Floating gate – Multiple values
Patent
1996-01-31
1998-06-16
Popek, Joseph A.
Static information storage and retrieval
Floating gate
Multiple values
3651852, G11C 1134
Patent
active
057681848
ABSTRACT:
A non-volatile semiconductor memory device including a plurality of non-volatile memory cells and a plurality of reference cells provided for corresponding to storage states in the non-volatile memory cell, generating a reference current which is a current between two output currents of at least two reference cells or a current proportional to the current when data reading from the non-volatile memory cell, and comparing the reference current and a current from the non-volatile memory cell to read out a data stored in the non-volatile memory cell.
REFERENCES:
patent: 4807188 (1989-02-01), Casagrande
patent: 5418743 (1995-05-01), Tomioka et al.
IBM Technical Disclosure Bulletin, "Mid-Level Current Generator Circuit", vol. 33, No. 1B, Jun. 1990, pp. 386-388.
Hayashi Yutaka
Yamagishi Machio
Popek Joseph A.
Sony Corporation
LandOfFree
Performance non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Performance non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Performance non-volatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1733954