Performance non-volatile semiconductor memory device

Static information storage and retrieval – Floating gate – Multiple values

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3651852, G11C 1134

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active

057681848

ABSTRACT:
A non-volatile semiconductor memory device including a plurality of non-volatile memory cells and a plurality of reference cells provided for corresponding to storage states in the non-volatile memory cell, generating a reference current which is a current between two output currents of at least two reference cells or a current proportional to the current when data reading from the non-volatile memory cell, and comparing the reference current and a current from the non-volatile memory cell to read out a data stored in the non-volatile memory cell.

REFERENCES:
patent: 4807188 (1989-02-01), Casagrande
patent: 5418743 (1995-05-01), Tomioka et al.
IBM Technical Disclosure Bulletin, "Mid-Level Current Generator Circuit", vol. 33, No. 1B, Jun. 1990, pp. 386-388.

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