Performance matrix, method of making an active matrix displays i

Details Performance matrix, method of making an active matrix displays i Performance matrix, method of making an active matrix displays i

1998-01-26

2000-12-12

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, H01L 2904, H01L 31036, H01L 310376, H01L 3120, H01L 2715

Patent

active

061602701

ABSTRACT:
Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix devices incorporating the transistors, including active matrix displays. The inverted gate line is formed in a multilayer metal structure deposited sequentially before patterning of a first bottom refractory layer, an aluminum layer and a second refractory layer for the gate structure. The aluminum layer is anodized adjacent the gate to prevent step coverage problems. A further improvement is provided when forming an active matrix display storage capacitor utilizing the multilayer gate structure.

REFERENCES:
patent: 5643817 (1997-07-01), Kim et al.
patent: 5731216 (1998-03-01), Holmberg et al.
patent: 5874746 (1999-02-01), Homlberg et al.
patent: 5903326 (1999-05-01), Lee

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