Pellicle and method for producing pellicle

Details Pellicle and method for producing pellicle Pellicle and method for producing pellicle

2011-05-31

2011-05-31

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C428S014000

Reexamination Certificate

active

07951513

ABSTRACT:
A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with <100> orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.

REFERENCES:
patent: 5935733 (1999-08-01), Scott et al.
patent: 6197454 (2001-03-01), Yan
patent: 6623893 (2003-09-01), Levinson et al.
patent: 2003/0228529 (2003-12-01), Dieu et al.
patent: 2005/0048380 (2005-03-01), Nagata
patent: 2006/0281283 (2006-12-01), Yoshida et al.
patent: 2009/0104544 (2009-04-01), Kubota et al.
patent: 2009/0291372 (2009-11-01), Kubota et al.
patent: 2 121 980 (1984-01-01), None
U.S. Appl. No. 12/466,042, filed May 14, 2009, Kubota, et al.
Yashesh A. Shroff, et al., “EUV Pellicle Development for Mask Defect Control”, Emerging Lithographic Technologies X, Proc. of SPIE vol. 6151 615104-1, 2006, 10 pages.
Isao Yamada, “Cluster Ion Beam Tecnology”, chapter 4, Nikkan Kogyo Shimbun Ltd., Original Copy in Japanese, 41 pages and English translation of pp. 176-179, 3 pages.
Fumio Shimura, “Semiconductor Silicon Crystal Technology”, (“Structure of the Silicon Atom”), Chapter 2, Paragraph 2.2, Academic Press, Inc. (1989), cover page and pp. 19-22, Published 1989.
Fumio Shimura, “Semiconductor Silicon Crystal Technology”, (“Basic Crystallography”), chapter 3, Academic Press, Inc. (1989), pp. 21-82, Published 1989.

Affiliated with

Also associated with

Rating

Pellicle and method for producing pellicle does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pellicle and method for producing pellicle, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pellicle and method for producing pellicle will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2689534