Pellicle and method for manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C428S014000

Reexamination Certificate

active

07901846

ABSTRACT:
A pellicle of the present invention is provided with a silicon crystal film, the absorption coefficient of which is 0.005
m or lower with respect to light having a wavelength of 13.5 nm, as a pellicle film. The silicon crystal film is an indirect transition type semiconductor film and, therefore, the optical absorption coefficient thereof is relatively low. In particular, a single-crystal silicon film has a lower absorption coefficient than an amorphous silicon film and a polysilicon film. Thus, it is easy to obtain desired transmissivity required of a pellicle film for EUV from the single-crystal silicon film. Such a pellicle film as described above can be fabricated from an SOI film obtained by thin-filming an SOI substrate (including an SOQ substrate and an SOG substrate).

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