PECVD (plasma enhanced chemical vapor deposition) method for dep

Details PECVD (plasma enhanced chemical vapor deposition) method for dep PECVD (plasma enhanced chemical vapor deposition) method for dep

1989-12-28

1990-11-13

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

427 39, C23C 1650

Patent

active

049694154

ABSTRACT:
The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

REFERENCES:
patent: 4138512 (1979-02-01), Glaski
patent: 4505949 (1985-03-01), Jelks
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4625678 (1986-12-01), Shioya
Zarowin, C. B., "Room Temperature, Plasma Chemical Transport Deposition of Metal (gold) Films", IBM Tech. Discl. Bulletin, vol. 21, No. 9, Feb 1979, p. 3832.
Akitmato, K. et al., "Formation of W.sub.x Si.sub.1 --.sub.x by Plasma Chemical Vapor Deposition", Appl. Phys. Lett. 39(5), Sep. 1981, pp. 445-446.
Horwitz, C. M., "Hollow Cathode Reactive Sputter Etching--A New High-Rate Process", Appl. Phys. Lett. 43(10), Nov. 1983, pp. 977-979.
Brors, D. L. et al., "Low Pressure Chemical Vapor Deposition of Tungsten Silicide" Semiconductor International, May 1984, pp. 82-85.
Gorowitz, B., "Applications of Plasma Enhanced Chemical Vapor Deposition in VLSI", Solid State Tech., vol. 28, No. 6, Jun. 1985, pp. 197-203.
Bartha, J. et al., "In Situ Determination of Growth Rate and Stochiometry in a Heterogeneous CVD Reactor", IBM Tech. Disc. Bull., vol. 29, No. 11, Apr. 1987, p. 4851.

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