Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-03-07
2006-03-07
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S773000
Reexamination Certificate
active
07009272
ABSTRACT:
A series of conductive layers separated by interlayer gaps is formed adjacent a substrate layer, the conductive layer and interlayer gap dimensions defining aspect ratios for trenches between the conductive layers. A layer of dielectric material is deposited over the conductive layers using plasma enhanced chemical vapor deposition. Trenches having aspect ratios within specified geometric categories are incompletely filled, leaving interlayer voids which may have desirable dielectric properties.
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Andideh Ebrahim
Borger Wilmer F.
West Jeffrey T.
Intel Corporation
Plimier Michael D.
Vu Hung
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