PCMO thin film with resistance random access memory (RRAM)...

Details PCMO thin film with resistance random access memory (RRAM)... PCMO thin film with resistance random access memory (RRAM)...

2006-06-13

2006-06-13

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S382000, C438S384000, C257S536000, C257S537000

Reexamination Certificate

active

07060586

ABSTRACT:
PrCaMnO (PCMO) thin films with predetermined memory-resistance characteristics and associated formation processes have been provided. In one aspect the method comprises: forming a Pr3+1−xCa2+xMnO thin film composition, where 0.1<x<0.6; in response to the selection of x, varying the ratio of Mn and O ions as follows: O2−(3±20%); Mn3+((1−x)±20%); and, Mn4+(x±20%). When the PCMO thin film has a Pr3+0.70Ca2+0.30Mn3+0.78Mn4+0.22O2−2.96composition, the ratio of Mn and O ions varies as follows: O2−(2.96); Mn3+((1−x)+8%); and, Mn4+(x−8%). In another aspect, the method creates a density in the PCMO film, responsive to the crystallographic orientation. For example, if the PCMO film has a (110) orientation, a density is created in the range of 5 to 6.76 Mn atoms per 100 Å2in a plane perpendicular to the (110) orientation.

REFERENCES:
patent: 6673691 (2004-01-01), Zhuang et al.
patent: 6759249 (2004-07-01), Zhuang et al.
patent: 6834008 (2004-12-01), Rinerson et al.
patent: 2003/0183878 (2003-10-01), Tajiri et al.

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