Semiconductor device manufacturing: process – Making point contact device
Reexamination Certificate
2008-07-22
2008-07-22
Soward, Ida M. (Department: 2822)
Semiconductor device manufacturing: process
Making point contact device
C438S104000, C257SE27006
Reexamination Certificate
active
07402456
ABSTRACT:
A method is provided for forming a Pr0.3Ca0.7MnO3(PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure. In one aspect the first crystalline structure is either amorphous or a weak-crystalline. Then, the resistance state of the PCMO film is changed in response to unipolar pulses. In another aspect, the PCMO thin film has either a polycrystalline structure. Then, the resistance state of the PCMO film changes in response to bipolar pulses.
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Shangqing Liu, Naijuan Wu and Alex Ignatiev,Applied Physics Letters,vol. 76, No. 19, pp. 2749, May 2000.
Hsu Sheng Teng
Li Tingkai
Zhang Fengyan
Zhuang Wei-Wei
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Soward Ida M.
Thomas Toniae M
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