PCMO spin-coat deposition

Details PCMO spin-coat deposition PCMO spin-coat deposition

2006-08-29

2006-08-29

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S781000, C438S782000, C257S295000

Reexamination Certificate

active

07098043

ABSTRACT:
A Pr1-XCaXMnO3(PCMO) spin-coat deposition method for eliminating voids is provided, along with a void-free PCMO film structure. The method comprises: forming a substrate, including a noble metal, with a surface; forming a feature, such as a via or trench, normal with respect to the substrate surface; spin-coating the substrate with acetic acid; spin-coating the substrate with a first, low concentration of PCMO solution; spin-coating the substrate with a second concentration of PCMO solution, having a greater concentration of PCMO than the first concentration; baking and RTA annealing (repeated one to five times); post-annealing; and, forming a PCMO film with a void-free interface between the PCMO film and the underlying substrate surface. The first concentration of PCMO solution has a PCMO concentration in the range of 0.01 to 0.1 moles (M). The second concentration of PCMO solution has a PCMO concentration in the range of 0.2 to 0.5 M.

REFERENCES:
patent: 6664117 (2003-12-01), Zhuang et al.
patent: 2003/0148545 (2003-08-01), Zhuang et al.

Affiliated with

Also associated with

Rating

PCMO spin-coat deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PCMO spin-coat deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PCMO spin-coat deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3670412