Patterning silicon carbide films

Details Patterning silicon carbide films Patterning silicon carbide films

1997-12-24

1999-09-28

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

438742, 438743, 438706, H01L 213065, H01L 21314, H01L 21316, H01L 21318

Patent

active

059587938

ABSTRACT:
A method of etching an opening having tapered wall in a layer of silicon carbide (SiC) includes forming a layer of a resist on the SiC layer. An opening having tapered wall is formed in the resist layer so as to expose a portion of the SiC layer. The exposed portion of the SiC layer is then exposed to a plasma of a gas containing carbon and fluorine to etch an opening through the SiC layer with the opening having tapered walls. If a layer of a glass is provided under the SiC layer, the plasma will also etch through the glass layer to provide an opening in the glass layer having tapered walls.

REFERENCES:
patent: 4351894 (1982-09-01), Yonezawa et al.
patent: 4735920 (1988-04-01), Stephani et al.
patent: 4865685 (1989-09-01), Palmour
patent: 4981551 (1991-01-01), Palmour
patent: 5571374 (1996-11-01), Theor et al.

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