Patterning method in the manufacture of miniaturized devices

Details Patterning method in the manufacture of miniaturized devices Patterning method in the manufacture of miniaturized devices

1987-12-14

1990-01-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG72, 148DIG51, 148DIG84, 148DIG106, 148DIG149, 156662, 156612, 437 22, 437 90, 437132, 437228, 437935, 437936, H01L 21265, H01L 2120

Patent

active

048973610

ABSTRACT:
When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.

REFERENCES:
patent: 4137107 (1979-01-01), Nijman et al.
patent: 4276368 (1981-06-01), Heller et al.
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4371412 (1983-02-01), Nishizawa
patent: 4404072 (1983-09-01), Kohl et al.
patent: 4450041 (1984-05-01), Aklufi
patent: 4575924 (1986-03-01), Reed et al.
patent: 4637129 (1987-01-01), Derkits et al.
patent: 4648095 (1987-03-01), Iwasaki et al.
patent: 4678096 (1987-06-01), Salzman et al.
patent: 4692207 (1987-09-01), Bouadma et al.
patent: 4698129 (1987-10-01), Puretz et al.
patent: 4711857 (1987-12-01), Cheng
patent: 4717681 (1988-01-01), Curran
patent: 4731158 (1988-03-01), Brannon
patent: 4733283 (1988-03-01), Kuroda
patent: 4742379 (1988-05-01), Yamashita et al.
patent: 4773076 (1988-09-01), Yamamoto et al.
Komuro et al., "Maskless Etching of a Nanometer Structure by Focused Ion Beams", J. Vac. Sci. Technol. B1 (4), Oct.-Dec. 1983, pp. 985-989.
Ochiai et al., "Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas", Jap. J. Appl. Phys., vol. 24, No. 3, Mar. 1985, pp. L169-L172.
Chi et al., "Ion Beam Damage-Induced Masking for Photoelectrochemical Etching of IV-V Semiconductors", J. Appl. Phys. 60 (11), 1 Dec. 1986, pp. 4012-4014.
La Marche et al., "Focused Ion Beam Microlithography . . . ", J. Vac. Sci. Technol., B1 (4), Oct.-Dec. 1983, pp. 1056-1058.
Harriott et al., "Decomposition of Palladium Acetate Films With a Microfocused Ion Beam," Appl. Phys. Lett. 49 (24), 15 Dec. 1986, pp. 1661-1662.
Kondo et al., "Gallium and Hydrogen Ion Irradiation During GaAs Molecular Beam Epitaxy," Jap. J. Appl. Phys., vol. 24, No. 5, May 1985, pp. L370-L372.
Kuwano, "Dry Development of Resists Exposed to Low-Energy Focused Gallium Ion Beam", J. Appl. Phys. 55 (4), 15 Feb. 1984, pp. 1149-1154.
"New Diffraction Grating Profiles in InP for DFB Lasers and Integrated Optics", Electronics Letters, vol. 19 (1983), pp. 1076-1077, by L. D. Westbrook et al.

Affiliated with

Also associated with

Rating

Patterning method in the manufacture of miniaturized devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Patterning method in the manufacture of miniaturized devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning method in the manufacture of miniaturized devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1923341