Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-09-25
2010-12-14
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S749000, C438S005000
Reexamination Certificate
active
07851370
ABSTRACT:
A patterning method is provided. In the patterning method, a film is formed on a substrate and a pre-layer information is measured. Next, an etching process is performed to etch the film. The etching process includes a main etching step, an etching endpoint detection step, an extension etching step and an over etching step. An extension etching time for performing the extension etching step is set within 10 seconds based on a predetermined correlation between an extension etching time and the pre-layer information, so as to achieve a required film profile.
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patent: 2004/0152331 (2004-08-01), Xu et al.
patent: 2007/0020777 (2007-01-01), Tso et al.
patent: 2008/0311687 (2008-12-01), Yamashita et al.
Kuo Lung-En
Liao Jiunn-Hsiung
Yang Min-Chieh
Garber Charles D
J.C. Patents
Junge Bryan R
United Microelectronics Corp.
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