Patterning method

Fishing – trapping – and vermin destroying

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437173, 437101, H01L 21465

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active

054459974

ABSTRACT:
A patterning method which comprises forming a photosensitive inorganic semiconductor layer on a semiconductor substrate and irradiating the photosensitive inorganic semiconductor layer which is kept in contact with an electrolyte with light of energy greater than the band gap of the semiconductor layer. Thus, a portion of the semiconductor layer which has been exposed or unexposed to light is dissolved into the electrolyte, thereby producing a desired pattern on the substrate.

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"Selective Photoetching of n-GaAs/ZnSe Heterostructures" by J. Van de Ven 6064 Mater. Lttr. 7, Mar. 1989, No. 12, pp. 468-472 (Amsterdam, NL).
"Localized Photoactivation with Pd of p-InP. . . Plating", by G. Stremsdoerfer et al., Jour. of the Ele. Society, 133, Apr. 1986, NO. 4, pp. 851-852 (Manchester, N.H.).
"Neg. Photo. Etch. Syst." by W. Moreau, IBM Tech. Dis. Bulletin, vol. 13, No. 3, pp. 794 (Aug. 1970).
"Photo-Electrochemically-Induced . . . Patterning" by Jan W. M. Jacobs et al., 1046 Journal of the Ele. Soc. 36, No. 12, Dec. 1989 (Manchester, N.H.).
"Effect of Carrier . . . Heterostructures" by M. N. Ruberto et al., Appl. Physl. Letter 55, No. 10, Sep. 4, 1989 (New York).

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