Patterning layers comprised of spin-on ceramic films

Details Patterning layers comprised of spin-on ceramic films Patterning layers comprised of spin-on ceramic films

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C430S270210, C430S271100, C430S495100, C430S945000

Reexamination Certificate

active

06929982

ABSTRACT:
The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHzwhere 0.1≦v≦0.9, 0≦w≦0.5, 0.05≦x≦0.9, 0≦y≦0.5, 0.05≦z≦0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHzwhere 0.05<v<0.8, 0<w<0.9, 0.05<x<0.8, 0<y<0.8, 0.05<z<0.8 for v+w+x+y+z=1.

REFERENCES:
patent: 5009986 (1991-04-01), Kawaguchi et al.
patent: 6489030 (2002-12-01), Wu et al.
patent: 6699810 (2004-03-01), Schwab et al.

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