Patterning electrode materials free from berm structures for...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S059000, C438S062000, C438S095000, C438S099000, C257SE31007, C257SE31027

Reexamination Certificate

active

07863074

ABSTRACT:
A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material.

REFERENCES:
patent: 4996108 (1991-02-01), Divigalpitiya et al.
patent: 5125984 (1992-06-01), Kruehler et al.
patent: 5261968 (1993-11-01), Jordan
patent: 5501744 (1996-03-01), Albright et al.
patent: 5536333 (1996-07-01), Foote et al.
patent: 5622634 (1997-04-01), Noma et al.
patent: 5665175 (1997-09-01), Safir
patent: 5985691 (1999-11-01), Basol et al.
patent: 6328871 (2001-12-01), Ding et al.
patent: 6361718 (2002-03-01), Shinmo et al.
patent: 6423565 (2002-07-01), Barth et al.
patent: 6632113 (2003-10-01), Noma et al.
patent: 7220321 (2007-05-01), Barth et al.
patent: 7252923 (2007-08-01), Kobayashi
patent: 7364808 (2008-04-01), Sato et al.
patent: 7736755 (2010-06-01), Igarashi et al.
patent: 7741560 (2010-06-01), Yonezawa
patent: 2002/0004302 (2002-01-01), Fukumoto et al.
patent: 2002/0061361 (2002-05-01), Nakahara et al.
patent: 2006/0220059 (2006-10-01), Satoh et al.
patent: 2007/0089782 (2007-04-01), Scheuten et al.
patent: 2007/0151596 (2007-07-01), Nasuno et al.
patent: 2007/0169810 (2007-07-01), Van Duren et al.
patent: 2008/0041446 (2008-02-01), Wu et al.
patent: 2008/0092945 (2008-04-01), Munteanu et al.
patent: 2008/0092953 (2008-04-01), Lee
patent: 2008/0110491 (2008-05-01), Buller et al.
patent: 2008/0210303 (2008-09-01), Lu et al.
Ellmer et al., Copper Indium Disulfide Solar Cell Absorbers Prepared in a One-Step Process by Reactive Magnetron Sputtering from Copper and Indium Targets; Elsevier Science B.V; Thin Solid Films 413 (2002) pp. 92-97.
International Search Report & Written Opinion of PCT Application No. PCT/US 09/46161, date of mailing Jul. 27, 2009, 14 pages total.
International Search Report & Written Opinion of PCT Application No. PCT/US 09/46802, mailed on Jul. 31, 2009, 11 pages total.
Onuma et al., Preparation and Characterization of CuInS Thin Films Solar Cells with Large Grain, Elsevier Science B.V; Solar Energy Materials & Solar Cells 69 (2001) pp. 261-269.
International Search Report & Written Opinion of PCT Application No. PCT/US/09/59095, date of mailing Dec. 4, 2009, 12 pages total.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Patterning electrode materials free from berm structures for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Patterning electrode materials free from berm structures for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning electrode materials free from berm structures for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2715009

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.