Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2004-12-09
2008-10-14
Alanko, Anita K (Department: 1792)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S058000, C219S121200, C204S192340, C204S192350, C427S585000, C427S331000, C427S372200, C427S551000, C427S552000, C427S553000, C427S555000, C427S532000, C977S856000, C977S857000, C977S888000, C977S890000, C977S891000
Reexamination Certificate
active
07435353
ABSTRACT:
The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.
REFERENCES:
patent: 4348473 (1982-09-01), Okumura et al.
patent: 4535023 (1985-08-01), Whitlock
patent: 6014259 (2000-01-01), Wohlstadter
patent: 7238294 (2007-07-01), Koops et al.
patent: 2007/0134420 (2007-06-01), Koberstein et al.
patent: 43 18 663 (1994-10-01), None
patent: 0 233 747 (1987-08-01), None
patent: WO 03/088340 (2003-10-01), None
patent: WO 2004/079450 (2004-09-01), None
patent: WO 2006/063098 (2006-06-01), None
Mednikarov, “Dependence of the dissolution characteristics of As2S3 as a photoresist on the condensation rate and evaporation temperature,” Jnl. of Vacuum Science and technology, Part B, V. 7, N. 3, pp. 561-564, May 1989.
Johnson et al., “Condensed Gas, In Situ Lithography,” IBM Technical Disclosure Bulletin, vol. 20, No. 9, pp. 3737-3738, Feb. 1978.
Brown et al., “‘Sputtering’ of Ice by MeV Light Ions,” Phys. Rev. Lett., vol. 40, No. 15, pp. 1027-1030, Apr. 10, 1978.
Brown et al., “Linear and Nonlinear Processes in the Erosion of H2O Ice by Fast Light Ions,” Phys. Rev. Lett., vol. 45, No. 20, pp. 1632-1635, Nov. 17, 1980.
“Laser-Induced Sublimation of GaAs For Semiconductor Masks,” IBM Technical Disclosure Bulletin, vol. 31, No. 7, pp. 34-35, Dec. 1988.
“Selective Deposition With ‘Dry’ Vaporizable Lift-off Mask,” IBM Technical Disclosure Bulletin, vol. 35, No. 1A, pp. 75-76, Jun. 1992.
King et al., “Nanometer Patterning with Ice,” Nano Letters, vol. 5, No. 6, pp. 1157-1160, Jun. 2005.
Gutzow et al., “On the mechanism of formation of amorphous condensates from the vapour phase, (l). General theory,” Jnl. of Non-Crystalline Solids, vol. 16, pp. 128-142, 1974, no month available.
Hobbs, “Ice Physics,” pp. 1, 52, 53, Oxford University Press, London, 1974, no month available.
Sack et al., “Sublimation of vapor-deposited water ice below 179 K, and its dependence on growth conditions,” Physical Review B, Third Series, vol. 48, No. 14, pp. 9973-9978, Oct. 1, 1993.
Debenedetti, “Supercooled glassy water,” J. Phys.: Condens. Matter, vol. 15, pp. R1669-R1726, 2003, no month available.
Safarik et al., “Thickness dependent crystallization kinetics of sub-micron amorphous solid water films,” Jnl. of Chemical Physics, vol. 118, No. 10, pp. 4660-4671, Mar. 8, 2003.
Angell, “Amorphous Water,” Annual Rev. Phys. Chem., vol. 55, pp. 559-583, Feb. 3, 2004.
Chaplin, “Amorphous Ice and Glassy Water,” taken from “Water structure and Science,” http://www.Isbu.ac.uk/water/amorph.html, updated Dec. 10, 2007.
Chaplin, “Water Phase Diagram,” taken from “Water Structure and Science,” http://www.Isbu.ac.uk/water/phase.html, updated Jan. 18, 2008.
Branton Daniel
Golovchenko Jene A.
King Gavin M.
Schürmann Gregor M.
Alanko Anita K
Lober Theresa A.
President and Fellows of Harvard College
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