Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2011-08-09
2011-08-09
Alanko, Anita K (Department: 1713)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S058000, C219S121200, C204S192340, C204S192350, C427S585000, C427S331000, C427S372200, C427S551000, C427S552000, C427S553000, C427S555000, C427S532000, C977S856000, C977S857000, C977S888000, C977S890000, C977S891000
Reexamination Certificate
active
07993538
ABSTRACT:
The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.
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Branton Daniel
Golovchenko Jene A.
King Gavin M.
Schurmann Gregor M.
Alanko Anita K
Lober Theresa A.
President and Fellows of Harvard College
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