Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-03-21
2006-03-21
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
C438S931000, C438S789000
Reexamination Certificate
active
07015142
ABSTRACT:
In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a crystalline substrate having a preselected crystal face. A thin-film graphitic layer is disposed on the preselected crystal face. The thin-film graphitic layer is patterned so as to define at least one functional structure.
REFERENCES:
patent: 5993697 (1999-11-01), Cohen et al.
patent: 6083624 (2000-07-01), Hiura
patent: 6159558 (2000-12-01), Wolfe et al.
patent: 6245417 (2001-06-01), Huang
patent: 6540973 (2003-04-01), Sasaki et al.
Bachtold et al.: “Logic Circuits with Carbon Nanotube Transistors” Science—Nov. 9, 2001—p. 1317—vol. 294.
Charrier et al.: “Solid-state Decomposition of Silicon Carbide for Growing Ultra-thin Heteroepitaxial Graphite Films” Journal of App Physics—Sep. 1, 2002—p. 2479—vol. 92.
Fuhrer et al.: “High-Mobility Nanotube Transistor Memory” Nano Letters—May 3, 2002—p. 755—vol. 2—No. 7.
Javey et al.: “Ballistic Carbon Nanotube Field-Effect Transistors” Nature—Aug. 7, 2003—p. 654—vol. 424.
Kempa et al.: “A Field-Effect-Transistor from Graphite” EPJ Manuscript—(believed to have been published Apr. 4, 2003).
Mintmire et al.: “Universal Density of States for Carbon Nanotubes” Physical Review Letters—Sep. 21, 1998—p. 2506—vol. 81—No. 12.
Nakada et al.: “Edge State in Graphene Ribbons” Physical Review B—Dec. 15, 1996—p. 17954—vol. 54—No. 24.
Poncharal et al.: “Room Temperature Ballistic Conduction in Carbon Nanotubes” J. Phys. Chem. B—Nov. 6, 2002—p. 12104.
Wakabayashi: “Electronic Transport Properties of Nanographite Ribbon Junctions” Physical Review B—Sep. 11, 2001—p. 125428-1—vol. 64.
Frank et al.: “Carbon Nanotube Quantum Resistors” Science—Jun. 12, 1998—p. 1744—vol. 280.
Berger Claire
DeHeer Walt A.
First Phillip N.
Bockhop Bryan W.
Bockhop & Associates LLC
Georgia Tech Research Corporation
Nhu David
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