Patterned thin film graphite devices and method for making same

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S931000, C438S789000

Reexamination Certificate

active

07015142

ABSTRACT:
In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a crystalline substrate having a preselected crystal face. A thin-film graphitic layer is disposed on the preselected crystal face. The thin-film graphitic layer is patterned so as to define at least one functional structure.

REFERENCES:
patent: 5993697 (1999-11-01), Cohen et al.
patent: 6083624 (2000-07-01), Hiura
patent: 6159558 (2000-12-01), Wolfe et al.
patent: 6245417 (2001-06-01), Huang
patent: 6540973 (2003-04-01), Sasaki et al.
Bachtold et al.: “Logic Circuits with Carbon Nanotube Transistors” Science—Nov. 9, 2001—p. 1317—vol. 294.
Charrier et al.: “Solid-state Decomposition of Silicon Carbide for Growing Ultra-thin Heteroepitaxial Graphite Films” Journal of App Physics—Sep. 1, 2002—p. 2479—vol. 92.
Fuhrer et al.: “High-Mobility Nanotube Transistor Memory” Nano Letters—May 3, 2002—p. 755—vol. 2—No. 7.
Javey et al.: “Ballistic Carbon Nanotube Field-Effect Transistors” Nature—Aug. 7, 2003—p. 654—vol. 424.
Kempa et al.: “A Field-Effect-Transistor from Graphite” EPJ Manuscript—(believed to have been published Apr. 4, 2003).
Mintmire et al.: “Universal Density of States for Carbon Nanotubes” Physical Review Letters—Sep. 21, 1998—p. 2506—vol. 81—No. 12.
Nakada et al.: “Edge State in Graphene Ribbons” Physical Review B—Dec. 15, 1996—p. 17954—vol. 54—No. 24.
Poncharal et al.: “Room Temperature Ballistic Conduction in Carbon Nanotubes” J. Phys. Chem. B—Nov. 6, 2002—p. 12104.
Wakabayashi: “Electronic Transport Properties of Nanographite Ribbon Junctions” Physical Review B—Sep. 11, 2001—p. 125428-1—vol. 64.
Frank et al.: “Carbon Nanotube Quantum Resistors” Science—Jun. 12, 1998—p. 1744—vol. 280.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Patterned thin film graphite devices and method for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Patterned thin film graphite devices and method for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterned thin film graphite devices and method for making same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3534935

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.