Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-03-14
2010-02-09
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE21563
Reexamination Certificate
active
07659599
ABSTRACT:
In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon substrate with oxygen using a low implant energy to form an ultra-thin patterned seed layer; and (3) employing the ultra-thin patterned seed layer to form a patterned SOI layer on the silicon substrate. Numerous other aspects are provided.
REFERENCES:
patent: 5956597 (1999-09-01), Furukawa et al.
patent: 2003/0104658 (2003-06-01), Furukawa et al.
patent: 2006/0231892 (2006-10-01), Furukawa et al.
Booth, Jr. Roger Allen
Hsu Louis Lu-Chen
Mandelman Jack A.
Tonti William R.
Dugan & Dugan
International Business Machines - Corporation
Smith Bradley K
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