Patterned metallization for integrated circuits

Details Patterned metallization for integrated circuits Patterned metallization for integrated circuits

1985-12-13

1987-09-22

James, Andrew J.

357 67, H01L 2352, H01L 2354

Patent

active

046958681

ABSTRACT:
Large areas of metallization on a semiconductor surface are replaced with an interconnected pattern of metallization. When an area of metallization is covered with a layer of dielectric glass having a thermal coefficient of expansion substantially different from that of the metallization, use of the subject interconnected pattern of metallization significantly enhances the stability of the structure to thermal stress.

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patent: 3260902 (1966-07-01), Porter
patent: 3436282 (1966-10-01), Shoda
patent: 3976512 (1976-08-01), De Nora et al.
patent: 4307131 (1981-12-01), Moutou et al.
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4467345 (1984-08-01), Ozawa
patent: 4525733 (1985-06-01), Losee
patent: 4571275 (1986-02-01), Moksvold

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