Patternable low dielectric constant materials and their use...

Details Patternable low dielectric constant materials and their use... Patternable low dielectric constant materials and their use...

2007-12-11

2007-12-11

Gulakowski, Randy (Department: 1712)

Stock material or miscellaneous articles

Composite

Of silicon containing

C524S543000, C524S588000, C525S474000, C528S025000

Reexamination Certificate

active

11314307

ABSTRACT:
The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.

REFERENCES:
patent: 5290899 (1994-03-01), Tanaka et al.
patent: 5338818 (1994-08-01), Brunsvold et al.
patent: 5385804 (1995-01-01), Premlatha et al.
patent: 5422223 (1995-06-01), Sachdev et al.
patent: 5789460 (1998-08-01), Harkness et al.
patent: 5820944 (1998-10-01), Harkness et al.
patent: 5861235 (1999-01-01), Harkness et al.
patent: 5891529 (1999-04-01), Harkness et al.
patent: 6051625 (2000-04-01), Harkness et al.
patent: 6087064 (2000-07-01), Lin et al.
patent: 6096483 (2000-08-01), Harkness et al.
patent: 6107357 (2000-08-01), Hawker et al.
patent: 6187505 (2001-02-01), Lin et al.
patent: 6191183 (2001-02-01), Kobayashi et al.
patent: 6251486 (2001-06-01), Chandross et al.
patent: 6258506 (2001-07-01), Harkness et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6340734 (2002-01-01), Lin et al.
patent: 6342562 (2002-01-01), Kozawa et al.
patent: 6420084 (2002-07-01), Angelopoulos et al.
patent: 6420088 (2002-07-01), Angelopoulos et al.
patent: 6420441 (2002-07-01), Allen et al.
patent: 6472076 (2002-10-01), Hacker
patent: 6531260 (2003-03-01), Iwasawa et al.
patent: 6576345 (2003-06-01), Van Cleemput et al.
patent: 6653045 (2003-11-01), Angelopoulos et al.
patent: 6762501 (2004-07-01), Park et al.
patent: 6767983 (2004-07-01), Fujiyama et al.
patent: 6873026 (2005-03-01), Brunemeier et al.
patent: 2003/0073040 (2003-04-01), Iwasawa et al.
patent: 2003/0099899 (2003-05-01), Gronbeck et al.
patent: 60080851 (1985-05-01), None
patent: 2000-281790 (2000-10-01), None
Derwent Abstract of JP 2000-281790 A to Fujiyama and Teramoto entitled Silicone Resin with Triorganosilyl Linked to All or Part of Molecular Ends of Poly-Organo-Silsesquioxane, Jul. 27, 2004.
Harkness, et al., “Demonstration of a Directly Photopatternable Spin-On-Glass Based on Hydrogen Silsesquioxane and Photobase Generators”,Macromolecules, American Chemical Society, 1998, 31, pp. 4798-4805.

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