Pattern writing method during X-ray mask fabrication

Details Pattern writing method during X-ray mask fabrication Pattern writing method during X-ray mask fabrication

1996-05-28

1997-09-02

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 378 34, 378 35, G03F 900

Patent

active

056630182

ABSTRACT:
A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.

REFERENCES:
patent: 5318687 (1994-06-01), Estes et al.
patent: 5500312 (1996-03-01), Harriott et al.
patent: 5529862 (1996-06-01), Randall

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