Etching a substrate: processes – Forming or treating article containing magnetically...
Reexamination Certificate
2008-01-29
2008-01-29
Norton, Nadine (Department: 1792)
Etching a substrate: processes
Forming or treating article containing magnetically...
C216S040000, C360S324200
Reexamination Certificate
active
10980507
ABSTRACT:
A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.
REFERENCES:
patent: 6174801 (2001-01-01), Tzu et al.
patent: 2003/0039078 (2003-02-01), Li et al.
patent: 2003/0219973 (2003-11-01), Townsend et al.
patent: 2004/0080873 (2004-04-01), Shintani et al.
A. Hoffmann, M. Grimsditch, J.E. Pearson, J. Nogues, W.A.A. Macedo, and Ivan K. Schuller “Tailoring the exchange bias via shape anisotropy in ferromagnetic/antiferromagnetic exchange-coupled systems”, Physical Review B 67, 220406 (R) (2003), pp. 67 220406-1-67 220406-4 (Jun. 26, 2003).
A. Hoffmann, M. Grimsditch, J.E. Pearson, J. Nogues, W.A.A. Macedo, and Ivan K. Schuller “Tailoring the exchange bias via shape anisotropy” PACS numbers: 2001 PACS 75.75.+a, 75.70.Cn, 75.60.Ej (Dec. 16, 2002).
Mahmoud Dahimene
Norton Nadine
Pennington Joan
UChicago Argonne LLC
LandOfFree
Pattern transfer with self-similar sacrificial mask layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pattern transfer with self-similar sacrificial mask layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern transfer with self-similar sacrificial mask layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3904163