Pattern transfer with self-similar sacrificial mask layer...

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S040000, C360S324200

Reexamination Certificate

active

07323113

ABSTRACT:
A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.

REFERENCES:
patent: 6174801 (2001-01-01), Tzu et al.
patent: 2003/0039078 (2003-02-01), Li et al.
patent: 2003/0219973 (2003-11-01), Townsend et al.
patent: 2004/0080873 (2004-04-01), Shintani et al.
A. Hoffmann, M. Grimsditch, J.E. Pearson, J. Nogues, W.A.A. Macedo, and Ivan K. Schuller “Tailoring the exchange bias via shape anisotropy in ferromagnetic/antiferromagnetic exchange-coupled systems”, Physical Review B 67, 220406 (R) (2003), pp. 67 220406-1-67 220406-4 (Jun. 26, 2003).
A. Hoffmann, M. Grimsditch, J.E. Pearson, J. Nogues, W.A.A. Macedo, and Ivan K. Schuller “Tailoring the exchange bias via shape anisotropy” PACS numbers: 2001 PACS 75.75.+a, 75.70.Cn, 75.60.Ej (Dec. 16, 2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pattern transfer with self-similar sacrificial mask layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern transfer with self-similar sacrificial mask layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern transfer with self-similar sacrificial mask layer... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2745399

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.