Radiant energy – Means to align or position an object relative to a source or...
Patent
1993-09-21
1995-06-13
Anderson, Bruce C.
Radiant energy
Means to align or position an object relative to a source or...
2504922, H01J 3730
Patent
active
054245486
ABSTRACT:
A technique for creating an improved mask used in the semiconductor industry for replicating desired images in semiconductor bodies. The invention has application in both direct writing and blind writing processes and employs the steps of writing, in a sacrificial photoresist, a selected pattern of marks with an E-beam lithography system, measuring the actual pattern created and modifying the magnetic and electrostatic force used to control the beam to correct for stage translational errors, magnification, drift, mirror distortion, and column charging, caused by either mechanical aspects or by electrical problems in the system. A prototype mask is then created containing the actual image to be replicated, the image being provided with a plurality of alignment marks, and the actual positions of the marks in the prototype mask are measured. The magnetic and electrostatic forces used to create the prototype mask are modified to correct for process stress induced errors, localized heating and charging distortions, and effects due to the shape and layout of the pattern being created. As the last step, a final mask, suitable for use on the production line, is produced with the modified information.
REFERENCES:
patent: 4442361 (1984-04-01), Zasio et al.
patent: 4467211 (1984-08-01), Smith et al.
patent: 4583298 (1986-04-01), Raugh
patent: 4621371 (1986-11-01), Gotou et al.
patent: 4843563 (1989-06-01), Takahashi et al.
patent: 4910679 (1990-03-01), Takahashi et al.
patent: 5047647 (1991-09-01), Itoh et al.
patent: 5048103 (1991-09-01), Leclerc et al.
patent: 5124927 (1992-06-01), Hopwell et al.
Anderson Bruce C.
International Business Machines Corp.
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