Optics: measuring and testing – By polarized light examination – With light attenuation
Patent
1991-09-23
1993-08-31
Evans, F. L.
Optics: measuring and testing
By polarized light examination
With light attenuation
G01B 1100
Patent
active
052413616
ABSTRACT:
A method of measuring pattern shift on a diffused semiconductor wafer after an epitaxial process including measuring a ratio between the line width of a linear pattern vertical to an orientation flat and line width of a linear pattern parallel to the orientation flat and estimating the shift between these patterns.
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Evans F. L.
Shin-Etsu Handotai
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