Pattern shift measuring method

Optics: measuring and testing – By polarized light examination – With light attenuation

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G01B 1100

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active

052413616

ABSTRACT:
A method of measuring pattern shift on a diffused semiconductor wafer after an epitaxial process including measuring a ratio between the line width of a linear pattern vertical to an orientation flat and line width of a linear pattern parallel to the orientation flat and estimating the shift between these patterns.

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