Pattern shift measuring method

Details Pattern shift measuring method Pattern shift measuring method

1991-11-26

1992-12-15

Evans, F. L.

Optics: measuring and testing

By polarized light examination

With light attenuation

G01B 1100

Patent

active

051721880

ABSTRACT:
A method of measuring pattern shift of a semiconductor wafer with a high accuracy in a short period of time is disclosed, wherein a pattern composed of a groove or a ridge is formed on the semiconductor wafer, then at least one oxide film layer extending over and across the pattern is formed, subsequently, after an epitaxial growing process is performed to form an epitaxial layer over the semiconductor wafer, the lateral position of the pattern is measured both on the epitaxial layer and on the oxide film layer, and after that the position of the pattern measured at the epitaxial layer is compared with the lateral position of the pattern measured at the oxide film layer, thereby determining a displacement of the pattern.

REFERENCES:
Japanese Abstract 61-251123, vol. 11, No. 99, publication date: Mar. 27, 1987.
Japanese Abstract 61-251124, vol. 11, No. 99, publication date: Mar. 27, 1987.
Japanese Abstract 63-204105, vol. 12, No. 492, publication date: Dec. 22, 1988.
Japanese Abstract 63-301541, vol. 13, No. 139, publication date: Apr. 6, 1989.
Japanese Abstract 01-31413, vol. 13, No. 220, publication date: May 23, 1989.
Japanese Abstract 01-31414, vol. 13, No. 220, publication date: May 23, 1989.
Japanese Abstract 02-152250, vol. 14, No. 408, publication date: Sep. 4, 1990.
Japanese Abstract 03-44056, vol. 15, No. 183, publication date: May 10, 1991.
Patent Abstracts of Japan, vol. 012, No. 239 (E-630) 8 Feb. 1988, & JP-A-63-029 943 (NEC Corp.).
Patent Abstracts of Japan, vol. 014, No. 380 (E-0965) 25 May 1990, & JP-A-01 137 348 (NEC Corp.).

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