Pattern registration mark designs for use in...

Details Pattern registration mark designs for use in... Pattern registration mark designs for use in...

2006-04-25

2008-11-11

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257SE23179, C438S401000

Reexamination Certificate

active

07449792

ABSTRACT:
Pattern registration marks which include: a substrate and an upper material layer disposed above the substrate; an outer trench formed in the upper material layer, the outer trench having an outer trench width; an inner trench formed in the upper material layer, the inner trench having an inner trench width; and a conformal layer disposed in the inner trench and the outer trench, the conformal layer having a conformal layer thickness; wherein the outer trench width is greater than twice the conformal layer thickness, and wherein the inner trench width is less than or equal to twice the conformal layer thickness; and methods of using the same.

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