Pattern forming method using alignment from latent image or base

Details Pattern forming method using alignment from latent image or base Pattern forming method using alignment from latent image or base

1998-02-26

1999-11-23

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430 30, 430296, 430942, G03F 900

Patent

active

059897597

ABSTRACT:
To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

REFERENCES:
patent: 5783340 (1998-07-01), Farino et al.
patent: 5863680 (1999-01-01), Kawakubo et al.
F. Benistant et al., A Heavy Ion Implanted Pocket 1.10 .mu.m n-type Metal-Oxide-Semiconductor Field Effect Transistor With Hybrid Lithography (Electron-Beam/Deep Ultraviolet) and Specific Gate Passivation Process), J.Vac. Sci. Technol. B 14(6):4051-4054 (1996).
R. Jonckheere et al., "Electron Beam/DUV Intra-Level Mix-and-Match Lithography for Random Logic 0.25 .mu.m CMOS", Microelectronic Engineering, 27:231-234 (1995).

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