Pattern forming method and wiring pattern forming method,...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S048000, C438S070000, C438S708000, C257SE21347, C257SE21596

Reexamination Certificate

active

10898344

ABSTRACT:
To provide a pattern forming method enabling a thin film to be patterned with high precision by easy and low cost techniques. A thin film2is provided on a base material1containing a sublimable dyestuff, light is irradiated to the base material1, and heat generated by the light irradiation sublimates the sublimable dyestuff in a desired region, thereby removing the thin film2corresponding to an irradiation region where the light is irradiated to thereby pattern this thin film2.

REFERENCES:
patent: 2005/0042430 (2005-02-01), Toyoda
patent: A-62-276505 (1987-12-01), None
patent: A-05-074704 (1993-03-01), None
patent: 2000-282240 (2000-10-01), None

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