Pattern forming method and photomasks used therefor

Details Pattern forming method and photomasks used therefor Pattern forming method and photomasks used therefor

1992-06-04

1994-05-31

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 108, H01L 21027

Patent

active

053168780

ABSTRACT:
In a photoresist pattern formation by exposure using first and second photomasks, the first photomask has a transparent part, a rectangular opaque part having a first pair of sides and a second pair of sides, and a phase shifter, having a first edge crossing one of the first pair of sides, so that a part of the first edge is in the transparent part, and the second photomask has a transparent part, a rectangular opaque part corresponding to the rectangular opaque part of the first photomask, and a stripe-shaped opaque part corresponding to the first part of the first edge of the phase shifter. The rectangular opaque part of the first photomask is expanded in the direction of the first pair of sides, while the rectangular opaque part of the second photomask is expanded in the direction the second pair of sides. The amount of expansion is preferably not smaller than a misalignment tolerance.

REFERENCES:
Levenson et al., IEEE Transaction on Electron Devices, "Improving Resolution in Photolithography with a Phase-Shifting Mask", vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.
Levenson et al., IEEE Transaction on Electron Devices, "The Phase-Shifting Mask II: Image Simulations and Submicrometer Resist Exposures", vol. ED-31, No. 6, Jun. 1984, pp. 753-763.
Jinbo et al., Paper No. 27p-ZG-3, Extended Abstracts, (The 51st Autumn Meeting, 1990); The Japan Society of Applied Physics, No. 2, "0.2 .mu.m patterning by use of a Phase-shifting Mask".
Jinbo et al., Japanese Journal of Applied Physics, "Improvement of Phase-Shifter Edge Line Mask Method", vol. 30, No. 113, Nov. 1991, pp. 2998-3003.

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