Pattern forming method and phase shift mask manufacturing...

Details Pattern forming method and phase shift mask manufacturing... Pattern forming method and phase shift mask manufacturing...

2007-02-06

2010-12-07

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S311000

Reexamination Certificate

active

07846617

ABSTRACT:
A light-shielding layer over a transparent substrate is processed into a predetermined pattern by first etching and then a recess is formed in an underlying layer below the light-shielding layer by second etching using at least the light-shielding layer as a mask. Subsequently, a defect inspection of the recess is performed. If, as a result of the inspection, a residue defect is detected at the recess otherwise formed in the underlying layer below the light-shielding layer, defect portion data of a pattern of a region including a residue-defect portion is produced and a repairing resist pattern is formed on the light-shielding layer based on the defect portion data. Then, third etching is applied to the underlying layer below the light-shielding layer using the light-shielding layer and the repairing resist pattern as a mask, thereby repairing the residue-defect portion.

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patent: 2710967 (1997-10-01), None
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Korean Office Action corresponding to Korean Patent Application No. 10-2007-0016232 dated Mar. 25, 2010 Complete English translation.

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