Pattern forming method and method of manufacturing liquid crysta

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, 430312, 430321, 430323, 430324, 355 77, G03F 900, G03F 700

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057956863

ABSTRACT:
A pattern forming method of forming an overall pattern by connecting a plurality of pattern forming regions. The pattern forming method includes the steps of (A) forming, using a first exposure mask (RT11a), a plurality of latent images of first patterns arranged regularly in a photosensitive resist film (52) on a first region while forming unexposed regions having a size in which one or more of the first patterns are included and latent images of the first patterns in it on a third region (JT1), and (B) forming, using a second exposure mask (RT11b), a plurality of latent images of the first patterns arranged regularly in the photosensitive resist film (52) on a second region while forming latent images of the first patterns in the unexposed regions on the third region (JT1).

REFERENCES:
patent: 5286584 (1994-02-01), Gemmink et al.
patent: 5298761 (1994-03-01), Aoki et al.
patent: 5437946 (1995-08-01), McLoy
patent: 5573634 (1996-11-01), Ham

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