Pattern forming method and mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S311000

Reexamination Certificate

active

07910266

ABSTRACT:
Hole patterns are repeatedly arranged on a mask at a constant pitch in each of predetermined directions. In the predetermined directions, a first direction with the smallest pitch and a second direction with the second smaller pitch are specified. A Levenson phase shifter is formed corresponding to the hole patterns to cause the phases of transmitted light through the hole patterns adjacent to each other in the first direction to be opposite to each other. An exposure process is performed by two-point illumination which is adapted to improve the resolution property in the second direction.

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patent: 7217503 (2007-05-01), Saitoh et al.
patent: 7655388 (2010-02-01), Tan et al.
patent: 7659040 (2010-02-01), Setta
patent: 2004/0180294 (2004-09-01), Baba-Ali et al.
patent: 2006/0197934 (2006-09-01), Yamazoe
patent: 6-19114 (1994-01-01), None

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