Pattern forming method and electric device fabricating...

Details Pattern forming method and electric device fabricating... Pattern forming method and electric device fabricating...

2007-03-27

2007-03-27

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000, C438S712000, C438S745000, C216S057000, C216S062000

Reexamination Certificate

active

10669467

ABSTRACT:
A pattern forming method includes: forming an etching-subject layer on a substrate; forming a Ti layer on the etching-subject layer; forming a TiOx layer by irradiating light on a portion of the Ti layer using a mask; etching the Ti layer to form a TiOx pattern; etching the etching-subject layer using the TiOx pattern as a mask; and removing the TiOx pattern.

REFERENCES:
patent: 4288283 (1981-09-01), Umezaki et al.
patent: 4842677 (1989-06-01), Wojnarowski et al.
patent: 6004831 (1999-12-01), Yamazaki et al.
patent: 6048654 (2000-04-01), Nakayama et al.
patent: 2001/0033023 (2001-10-01), Suguro

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