Pattern forming method

Details Pattern forming method Pattern forming method

1991-11-26

1993-05-25

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37304

Patent

active

052142914

ABSTRACT:
In the case of manufacturing a dynamic memory of 256 MGbits or more according to a batch transfer process using a beam of electrons or a beam of charged particles, although the central resist pattern does not suffer from the insufficient exposure due to contribution of backscattered electrons from the surroundings to the resist exposure, but the peripheral resist pattern suffers from the insufficient exposure due to the proximity effect resulting from reduced backscattering of electrons during the exposure process. To cope with this, aperture portions of a mask for the peripheral resist pattern are corrected beforehand so as to make correction for the proximity effect of electrons on the peripheral resist pattern.

REFERENCES:
patent: 5036209 (1991-07-01), Kataoka et al.
patent: 5099133 (1992-03-01), Yamada

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