Pattern forming method

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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Details

C250S492200, C430S022000, C430S296000

Reexamination Certificate

active

06941008

ABSTRACT:
To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional-displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

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