Pattern forming method

Coating processes – Direct application of electrical – magnetic – wave – or... – Polymerization of coating utilizing direct application of...

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427503, 427504, 427515, 427517, 430294, 430408, 430433, B05D 306, G03C 500, G03C 518, G03C 526

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053245504

ABSTRACT:
In forming a resist pattern by forming a resist film containing an acid generator on a spin on glass film or a silicon resin film and subsequent exposure of light, an inhomogeneous distribution of an acid in the resist film caused by the spin on glass film or the silicon resin film is remedied by adding an acid generator beforehand into the spin on glass film or the silicon resin film or by using an organic polymer containing an acid generator. As a result, a profile defect in a cross section of the resist pattern caused by inhomogeneous acid distribution is prevented and the resist pattern has a rectangular cross-sectional shape.

REFERENCES:
patent: 4154872 (1979-05-01), Tsao et al.
patent: 4156035 (1979-05-01), Tsao et al.
patent: 4571349 (1986-02-01), Hockemeyer et al.
patent: 4708926 (1987-11-01), Kirchmayr et al.
patent: 5139815 (1992-08-01), Patterson
J. Vac. Sci. Technol. B6(1), Jan./Feb. 1988, C. P. Umbach et al.: Nanolithography with an acid catalized resist, pp. 319-322.
J. Vac. Sci. Technol. B6(1), Jan./Feb. 1988, Mark P. deGrandpre et al.: Characterization of a high-resolution novolak based negative electron-beam resist with 4 .mu.C/cm.sup.2 sensitivity, pp. 379-383.

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