Pattern forming method

Details Pattern forming method Pattern forming method

1982-09-24

1984-12-18

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156643, 1566591, 427 94, 427 96, 427259, 430314, 204192E, H01L 21308

Patent

active

044891016

ABSTRACT:
A pattern forming method for semiconductor devices in which a film layer of a compound containing silicon and nitrogen is formed between a substrate and a resist layer with a desired pattern readily formed utilizing a lift-off technique. A first film layer of a compound such as Si.sub.3 N.sub.4 is formed on a semiconductor substrate with a resist film layer formed in a desired pattern upon the first film layer. The first film layer is etched using the resist film layer as a mask. A second film layer is then formed on the substrate after which the first film layer is removed with an etchant which does not attack the second film layer.

REFERENCES:
patent: 4108717 (1978-08-01), Widmann
patent: 4202914 (1980-05-01), Havas
patent: 4223048 (1980-09-01), Engle
patent: 4262631 (1981-04-01), Kuback
Grobman et al., "Electron-Beam Lithography", IEEE Transactions on Electron Devices, vol. ED-26, No. 4, pp. 360-367, Apr. 1979.
Blakeslee et al., "Aluminum Etch Mask for Plasma Etching" IBM TDB, vol. 21, No. 3, Aug. 1978, p. 1251.

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