Pattern-forming material

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – Mixing of two or more solid polymers; mixing of solid...

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5253593, C08F 818

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active

048451436

ABSTRACT:
A pattern-forming material is made by halogenoacetylation of the hydroxyl group of the copolymer of hydroxystyrene, and methyl methacrylate or ethyl methacrylate copolymer. The pattern-forming material in this invention is based on a resin copolymer of hydroxystyrene which has excellent dry etching resistance properties and methyl methacrylate or hydroxy ethyl methacrylate which is transparent to deep UV radiation over a relatively wide spectral range, combined with halogenoacetyl groups as photoreactive groups. Further, as the pattern-forming materials of this invention are soluble in the various liquids described below, a resist solution can easily be prepared, and a film of the material can easily be formed by the spin coating process.

REFERENCES:
patent: 4090919 (1978-05-01), Chibata et al.
patent: 4720345 (1988-01-01), Linder et al.
Iwayanagi et al., IEEE Transactions on Electron Devices, vol. ED-28 (11), Nov. 1981, pp. 1306-1310.

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