Pattern forming contrast enhanced material utilizing water solub

Details Pattern forming contrast enhanced material utilizing water solub Pattern forming contrast enhanced material utilizing water solub

1992-03-27

1993-12-21

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430156, 430158, 430166, 430192, 430193, 430325, 430326, 430945, G03F 7023, G03F 730

Patent

active

052720365

ABSTRACT:
Disclosed is a pattern forming contrast enhanced material comprising (a) a water soluble photosensitive compound selected from the group consisting of a water soluble aliphatic photosensitive compound (excluding ring compounds) having one or more of the group expressed by the formula (I), an aliphatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), an aromatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), and a photosensitive pyridinium salt having one or more of the group expressed by the formula (I), (b) a water soluble resin and (c) water and a pattern forming method using the same. ##STR1## According to the present invention, this material is used as a contrast enhanced layer in the exposure effected by deep ultraviolet ray such as an excimer laser beam to form a good fine pattern of a submicron order.

REFERENCES:
patent: 4622283 (1986-11-01), Gray
patent: 4745042 (1988-05-01), Sasago et al.
patent: 4910123 (1990-03-01), Endo et al.
B. F. Griffing et al., IEEE Electron Device Letters, vol. EDL-4, No. 1, Jan., pp. 14-16 (1983).
M. Sasago et al., 1985 Symposium on VLSI Technology, Digest Technical Papers, pp. 76-77 (1985).
M. Endo et al., Technical Papers in Regional Technical Conference on Photopolymers Principles Processes and Materials, Oct. 30-Nov. 2, pp. 39-50 (1988).
B. F. Griffing et al., 6th Int. Tech. Confr. on Photopolymer (by Polymer Engineering & Sci.), pp. 185-192.

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