Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-08-30
2010-06-08
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S004000, C257S091000, C257S126000, C257S175000, C257S181000, C257S309000, C257S401000, C257S459000, C438S021000, C438S039000, C438S042000, C438S597000
Reexamination Certificate
active
07732817
ABSTRACT:
A partition-wall structure having a concave portion corresponding to a pattern formed by a functional liquid, including: a first concave portion provided corresponding to a first pattern; a second concave portion provided corresponding to a second pattern that is coupled to the first pattern and whose width is smaller than a width of the first pattern; and a convex portion provided in the first pattern.
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Hirai Toshimitsu
Ushiyama Toshihiro
Oliff & Berridg,e PLC
Pham Thanh V
Seiko Epson Corporation
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