Pattern formation method and surface treatment agent

Details Pattern formation method and surface treatment agent Pattern formation method and surface treatment agent

1997-10-15

2000-10-17

Shaver, Paul F.

Organic compounds -- part of the class 532-570 series

Organic compounds

Silicon containing

556437, C07F 708, C07F 718

Patent

active

061334650

ABSTRACT:
A surface of a semiconductor substrate of silicon is supplied with 4-trimethylsiloxy-3-penten-2-one serving as a surface treatment agent. Thus, H in OH groups existing on the surface of the semiconductor substrate is substituted with Si(CH.sub.3).sub.3 (i.e., a trimethylsilyl group), resulting in producing CH.sub.3 COCH.sub.2 COCH.sub.3 (i.e., acetylacetone). Then, the surface of the semiconductor substrate is coated with a resist, exposed by using a desired mask, and subjected successively to PEB and development, thereby forming a resist pattern thereon. Since the surface of the semiconductor substrate is treated with 4-trimethylsiloxy-3-penten-2-one, the surface of the semiconductor substrate is made to be hydrophobic, so that the adhesion of the semiconductor substrate can be improved. As a result, the resultant resist pattern has a satisfactory shape free from peeling.

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Pinnavaia, et al.: "Trioreganosilicon Acetylacetonates. Enol Ether Isomerism and Stereochemical Lability" Journal of the American Chemical Society, vol. 92, No. 15, Jul. 29, 1990, pp. 4544-4550.
Purrington, et al.: "Selective Monofluorination of beta-Diketones" Journal of Organic Chemistry, vol. 52, 1987, pp. 4307-4310.

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